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PD - 9.913A
IRF9Z34S/L
HEXFET(R) Power MOSFET
Advanced Process Technology l Surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description
l
D
VDSS = -60V RDS(on) = 0.14
G S
ID = -18A
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-18 -13 -72 3.7 88 0.59 20 370 -18 8.8 -4.5 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
--- ---
Max.
1.7 40
Units
C/W 8/25/97
IRF9Z34S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -60 --- --- -2.0 5.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.06 --- --- --- --- --- --- --- --- --- --- 18 120 20 58 7.5 1100 620 100
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID =-1mA 0.14 VGS =-10V, ID = -11A -4.0 V VDS = VGS, I D = -250A --- S VDS = -25V, I D = -11A -100 VDS = -60V, VGS = 0V A -500 VDS = -48V, VGS = 0V, TJ = 150C -100 V GS = -20V nA 100 VGS = 20V 34 ID = -18A 9.9 nC VDS = -48V 16 V GS = -10V, See Fig. 6 and 13 --- VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -18 showing the A G integral reverse --- --- -72 p-n junction diode. S --- --- -6.3 V TJ = 25C, IS = -18A, VGS = 0V --- 100 200 ns TJ = 25C, IF = -18A --- 280 520 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25C, L = 1.3mH RG = 25, IAS = -18A. (See Figure 12)
Pulse width 300s; duty cycle 2%. Uses IRF9Z34 data and test conditions
I SD -18A, di/dt 170A/s, VDD V(BR)DSS,
TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
IRF9Z34S/L
TJ
TJ
IRF9Z34S/L
IRF9Z34S/L
IRF9Z34S/L
IRF9Z34S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[ VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRF9Z34S/L
D2Pak Package Outline
10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A2
4.69 (.185) 4.20 (.165)
-B 1.32 (.052) 1.22 (.048)
10.16 (.400) RE F .
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F.
1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 ( .200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450)
NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS.
LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
Part Marking Information
D2Pak
IN TER NATION AL REC TIFIER L OGO AS SEMBLY LOT CODE
A
PART NU MBER F53 0S 9246 9B 1M
DATE CODE (YYW W ) YY = YEAR W W = W EE K
IRF9Z34S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF9Z34S/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 )
15 .4 2 (.60 9 ) 15 .2 2 (.60 1 )
2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)
FE E D D IR E C TIO N
1 3.5 0 (. 532 ) 1 2.8 0 (. 504 )
2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4
33 0.0 0 (14. 17 3) M AX .
6 0.0 0 (2 .36 2) M IN .
N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E.
26 .40 (1. 03 9) 24 .40 (.9 61 ) 3
3 0.4 0 (1 .19 7) MA X . 4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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